“School of Nano-Sciences”
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| Paper IPM / Nano-Sciences / 8148 |
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Using a quantum theory including spin-splitting effect in diluted magnetic semiconductors, we study the dependence of tunneling magnetoresistance (TMR) on barrier thickness, temperature and applied voltage in GaMnAs/GaAs/GaMnAs heterostructures. TMR ratios more than 65thicknesses, the TMR first increases and then decreases. Our model calculations well explain the main features of the recent experimental
observations.
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