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“School of Physics”

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Paper   IPM / P / 16259
School of Physics
  Title:   Micromorphology analysis of TiO2 thin films by atomic force microscopy images: The influence of postannealing
  Author(s): 
1.  S. Talu
2.  A. Achour
3.  Sh. Solaymani
4.  K. Nikpasand
5.  V. Dalouji
6.  A.H. Sari
7.  S. Rezaee
8.  N. B. Nezafat
  Status:   Published
  Journal: Microscopy Research and Technique
  Vol.:  83
  Year:  2020
  Pages:   457-463
  Supported by:  IPM
  Abstract:
This work describes an analysis of titanium dioxide (TiO2) thin films prepared on silicon substrates by direct current (DC) planar magnetron sputtering system in O2/Ar atmosphere in correlation with three‐dimensional (3D) surface characterization using atomic force microscopy (AFM). The samples were grown at temperatures 200, 300, and 400°C on silicon substrate using the same deposition time (30 min) and were distributed into four groups: Group I (as‐deposited samples), Group II (samples annealed at 200°C), Group III (samples annealed at 300°C), and Group IV (samples annealed at 400°C). AFM images with a size of 0.95 μm × 0.95 μm were recorded with a scanning resolution of 256 × 256 pixels. Stereometric analysis was carried out on the basis of AFM data, and the surface topography was described according to ISO 25178‐2:2012 and American Society of Mechanical Engineers (ASME) B46.1‐2009 standards. The maximum and minimum root mean square roughnesses were observed in surfaces of Group II (Sq = 7.96 ± 0.1 nm) and Group IV (Sq = 3.87 ± 0.1 nm), respectively.

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