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Paper IPM / P / 14326  


Abstract:  
We calculate the mobility of a twodimensional electron gas residing at the interface of LaAlO_{3}/SrTiO_{3} following a three band Boltzmann approach at low temperature, where carriercharged impurity scattering process is assumed to be dominant.
We explain the anisotropic characteristic of the dielectric function, which is a consequence of elliptical bands close to Fermi surface.
The screening effect, which weakens the longrange Coulomb interaction of the electronimpurity is considered within the random phase approximation. Working at carrier densities high enough to neglect the spinorbit induced splitting of the bands, we find that the mobility varies
inversely with the cubic power of the carrier density (n_{2D}^{−3})in good agreement with the experimental
results. We also investigate the role of variable dielectric
constant of SrTiO_{3} , the multiband nature of the system and interband interactions in
exploring this result.
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