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“School of Nano-Sciences”

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Paper   IPM / Nano-Sciences / 12108
School of Nano Science
  Title:   Uniaxial strain on gapped graphene
1 . Mani Farjam
2 . Hashem Rafii Tabar
  Status:   Published
  Journal: Physica E
  No.:  8
  Vol.:  42
  Year:  2010
  Pages:   6
  Publisher(s):   Elsevier B.V.
  Supported by:  IPM
We study the effect of uniaxial strain on the electronic band structure of gapped graphene. We consider two types of gapped graphene, one which breaks the symmetry between the two triangular sublattices (staggered model), and another which alternates the bonds on the honeycomb lattice (Kekulé model). In the staggered model, the effect of strains below a critical value is only a shift of the band gap location. In the Kekulé model, as strain is increased, band gap location is initially pinned to a corner of the Brillouin zone while its width diminishes, and after gap closure the location of the contact point begins to shift. Analytic and numerical results are obtained for both the tight-binding and Dirac fermion descriptions of gapped graphene.

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